发明名称 |
Dynamic semiconductor memory device with higher density bit line/word line layout |
摘要 |
A plurality of bit line contacts provided on one bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL and a plurality of bit line contacts provided on an adjacent bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL which is different from the space in which a corresponding one of the bit line contacts formed on the former bit line is arranged.
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申请公布号 |
US5578847(A) |
申请公布日期 |
1996.11.26 |
申请号 |
US19950402570 |
申请日期 |
1995.03.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
AOKI, MASAMI;YAMADA, TAKASHI;TAKATO, HIROSHI;OZAKI, TOHRU;HIEDA, KATSUHIKO;NITAYAMA, AKIHIRO |
分类号 |
H01L21/822;G11C11/401;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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