发明名称 LEAD TYPE ORGANOMETALLIC PRECURSOR AND ITS PREPARATION
摘要 <p>An organometallic lead precursor, represented by following formula:Lx.Pb(THD)2[I]wherein L is an electron donor ligand selected from the group consisting of NR3 (R=H, CH3) gas and Cl2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point. Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.</p>
申请公布号 JPH08310815(A) 申请公布日期 1996.11.26
申请号 JP19950260482 申请日期 1995.10.06
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI KANIN;RI SHIYUNKI;SESHIYU BII DESU
分类号 C01G21/02;C07F7/00;C07F7/24;C23C16/40;C30B25/00;C30B29/32;H01B3/00;H01G4/33;H01L21/822;H01L27/04;H01L41/187;(IPC1-7):C01G21/02 主分类号 C01G21/02
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