发明名称 TITANIUM SPUTTERING TARGET AND ITS MANUFACTURE
摘要 PURPOSE: To provide a target having a high film forming efficiency in contact holes. CONSTITUTION: In this manufacture, crystals in the target surface are oriented so that the X-ray defraction intensity of the (101'0) planes and/or (112'0) planes each perpendicular to the closest-packed face is 1.1 times as much as that of the crystals when they are randomly oriented and the X-ray diffraction intensity of (0002) planes each parallel to the closest-packed face is <1 time as much as that of the crystals when they are randomly oriented. Thus, the released directions of sputtered particles from the target surface are controlled so as to be perpendicular to the target surface.
申请公布号 JPH08311643(A) 申请公布日期 1996.11.26
申请号 JP19960032829 申请日期 1996.01.25
申请人 SUMITOMO SITIX CORP 发明人 ONISHI TAKASHI;YOSHIMURA YASUTOKU;OKAMOTO SETSUO
分类号 C22F1/18;C23C14/34;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 主分类号 C22F1/18
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