发明名称 Semiconductor memory device having redundancy serial access memory portion
摘要 A frame buffer memory of the present invention has a serial access memory portion including m normal units, a redundancy unit, and a serial selector. Each of the normal units includes four sense amplifiers, one data register provided corresponding to these sense amplifiers, and four transfer gates provided corresponding to these sense amplifiers and each connected between a corresponding sense amplifier and the data register. The redundancy unit includes two redundancy sense amplifiers, one redundancy data register provided corresponding to these redundancy sense amplifiers, and four redundancy transfer gates provided corresponding to these sense amplifiers. Two of the redundancy transfer gates are connected between a corresponding redundancy sense amplifier and the redundancy data register. m transfer gates are provided corresponding to m data registers, and a redundancy transfer gate is provided corresponding to the redundancy data register. The m transfer gates in the m normal units are all turned on in response to a corresponding one of four control signals. Two transfer gates in the redundancy unit are both turned on in response to corresponding two of the four control signals.
申请公布号 US5579269(A) 申请公布日期 1996.11.26
申请号 US19960632280 申请日期 1996.04.15
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YAMAMOTO, KOUJI
分类号 G11C11/401;G11C7/10;G11C29/00;G11C29/56;H01L21/82;(IPC1-7):G11C7/00 主分类号 G11C11/401
代理机构 代理人
主权项
地址