Semiconductor memory device

摘要

Disclosed is a semiconductor memory device requiring smaller current consumption. A fuse circuit for programming substitution between a defective word line WL and a spare word line SWL at a power supply potential Vcc and a ground potential GND includes two fuses. Fuse is cut off when power supply potential Vcc is selected, while fuse is cut off when ground potential GND is selected. Accordingly, no current flows between power supply potential Vcc and ground potential GND.