| 摘要 |
PURPOSE: To detect the defect of a mask stably through inspection of a transferred resist pattern by transferring the pattern using a negative resist. CONSTITUTION: A negative resist 7 is employed in an existing equipment for detecting the defect of a wafer pattern, and the defect of mask is inspected using a resist pattern transferred with lower quantity of exposure than an appropriate level. Since a signal from a pattern being transferred using a positive resist 3 contains only a weak signal from the bottom part of resist, presence of a signal from the end part of resist can not be determined and thereby a decision can not be made whether the hole pattern is detective or not. When the pattern is transferred using a negative resist 7, detection light from the end part and surface of the resist 7 and from the surface of a substrate 8 has sufficiently high reflection intensity and the profile of transfer pattern can be detected sufficiently. With such method, the defect of a mask can be detected stably by inspecting a transferred resist pattern. |
