| 摘要 |
PURPOSE: To manufacture this quantum semiconductor device including a quantum case by a step including the dry-etching step of a substrate. CONSTITUTION: A pyramidical etch pit sectioned of sidewall faces made of (110) faces is formed by anisotropical step on the (111) A face of a zinc-blend type substrate so as to deposit a quantum well layer sandwitched by a pair of barrier layers on this etch pit. |
