PARALLEL CIRCUIT WITH DIODE AND IGBT, MODULE THEREFOR, AND POWER CONVERTER USING THE SAME

摘要

PURPOSE: To reduce voltage oscillation when switching an IGBT so as to prevent malfunction of an inverter by increasing the thickness of a base layer of a diode to a predetermined number of times the thickness of a base layer of the IGBT and having coordination of turn-on characteristics of the IGBT and diode recovery characteristics. CONSTITUTION: On a collector electrode plate 23, an IGBT 29 and a diode 30 are connected in an electrically inverse-parallel manner. The thickness of a base layer of the diode 30 is not less than 1.2 times the thickness of a base layer of the IGBT 29. Thus, the parasitic capacitance C of the IGBT 29 and the diode 30 is increased so as to absorb energy of wiring inductance L in a module. Thus, a noise generated when switching the IGBT can be restrained, and malfunction can be prevented.