| 摘要 |
PURPOSE: To obtain a resist having high resolution and practical sensitivity and giving a satisfactory pattern shape and to especially obtain a resist stably keeping the line widths of isolated and close patterns formed on a substrate independently of the reflectance of the substrate and the NA,σ, etc., of a stepper. CONSTITUTION: This photoresist is a photoresist for an integrated circuit contg. an alkali-soluble resin and a quinonediazido compd. The optical parameter A of the photoresist defined by the equation A=1/d.ln[T(∞)/T(0)] is in the range of 0.90-1.30μm<-1> and the optical parameter B defined by the equation B=-1/d.ln[T(∞)] is in the range of 0.05-0.50μm<-1> . In the equations, T(0) is the light transmissivity of a resist film before exposure, T(∞) is the light transmissivity of the resist film at the time when the photosensitive agent in the film is completely decomposed after exposure and (d) is the thickness of the resist film. |
