| 摘要 |
PURPOSE: To provide a new plasma ashing device which can completely peel a photoresist layer and moreover prevent the photoresist layer from being contaminated with Na. CONSTITUTION: This plasma ashing device is provided with a chamber 12, a cylindrical part 14, which extends upward from the top of the chamber, an RF power supply 16 of an output of 1000W and a wafer stage 18, which is provided under the bottom of the chamber and has a wafer stage 20, which is placed with a wafer W, on its upper surface. The height of the chamber is low compared with that of the chamber of a prior art plasma ashing device. An RF voltage applying electrode plate 26 and a ground electrode 28 are provided on the cylindrical wall of the part 14 in opposition to each other. The plate 26 extends downward in a short length from the upper part of the part 14 in the longitudinal direction and the length of the plate 26 is shorter than that of an electrode provided in a prior art down flow-system device. A plurality of ground lines are connected with the rear of the wafer stage 20 in such a way that the connection positions of the ground lines with the rear become an even distribution. |
