发明名称 CURRENT SENSE-AMPLIFIER CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a current sense amplifier circuit of paired sub input/output line which assures excellent sensing rate even under a low power supply voltage and realizes stable sensing operation. SOLUTION: PMOS transistors 18, 20 are connected to the paired sub input/ output line SIO, /bar-SIO, the gate terminals thereof are cross-connected, NMOS transistors 22, 24 are provided in series connection thereto and the paired input/ output line IO, /bar-IO are connected to the connecting point of NMOS transistors. The gate terminals of the NMOS transistors 22, 24 are cross- connected to the sub input/output lines SIO, /bar-SIO. Since influence of voltage drop by the threshold value voltage is not applied to a control voltage of the NMOS transistors 22, 24, a lower voltage may be suitable and the operation is stabilized.
申请公布号 JPH08306191(A) 申请公布日期 1996.11.22
申请号 JP19960105553 申请日期 1996.04.25
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI KEISAN;CHIN SAIKUN
分类号 G11C11/419;G11C7/06;G11C11/407;G11C11/409;H01L21/8242;H01L27/108 主分类号 G11C11/419
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