发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: To suppress the effect of noise from ground line or power supply line by setting the impedance on the positive power supply line side higher than that of the ground line. CONSTITUTION: A positive power supply line Vdd has line width of about 3.5 pm which is thinner than the line width (6μm) of a ground line Vss. Since the line width of positive power supply line Vdd is set at about 40% that of the ground line, the wiring resistance is increased. Consequently, the impedance on the positive power supply line side is higher by about 70% than that on the ground line side. As a result, noise in the semiconductor device appears principally on the positive power supply line and the noise is reduced on the ground line side. Since noise is suppressed on the ground line side, erroneous function of a switching E-FET can be prevented.
申请公布号 JPH08306796(A) 申请公布日期 1996.11.22
申请号 JP19950106158 申请日期 1995.04.28
申请人 NIPPON STEEL CORP 发明人 GOTO MITSUHIKO
分类号 H01L27/088;H01L21/8234;H03K19/003;H03K19/0952;H03K19/20;(IPC1-7):H01L21/823;H03K19/095 主分类号 H01L27/088
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