| 摘要 |
PURPOSE: To prevent chlorine gas, which is used in an etching treatment, from remaining by a method wherein the flow rate ratio of specified alcohol gas, which is used as reaction gas, to oxygen gas and the pressure and temperature in an ashing chamber are specified to perform an ashing on a wafer. CONSTITUTION: A plasma ashing device 20 connected by an in-line manufacturing method is used as a plasma etching device 10 and a wafer with an aluminum wiring layer etched with chlorine gas is subjected to ashing. At this time, at least one kind of alcohol gas selected from among CH3 OH, C2 H5 OH, N-type C3 H7 OH and I-type C3 H7 OH alcohol gases is used in addition to oxygen gas, which is used as reaction gas, and the ashing is performed on the wafer on the conditions that the flow rate ratio of the alcohol gas to be oxygen gas is in a range of 1:2 to 1:5, the pressure in an ashing chamber is set as 200Pa (1.5Torr) or higher and the temperature in the chamber is in a range of 200 to 270 deg.C. |
