SEMICONDUCTOR THIN FILM STRUCTURE SURFACE ACOUSTIC WAVE FUNCTION ELEMENT AND ELECTRONIC DEVICE

摘要

PURPOSE: To obtain the function element conducting a valid interaction even when the film thickness is increased by arranging grating electrodes on a propagation path and properly selecting the width of the propagation path of a surface acoustic wave and the width of an interaction section of a semiconductor section. CONSTITUTION: Grating electrodes 2 whose width is narrower than a wavelengthλof a surface acoustic wave are arranged on a propagation path of the surface acoustic wave propagated on a piezoelectric substrate 1 or a substrate 1 having a piezoelectric thin film at a right angle to the propagation direction wider than a width W of the propagation path. Furthermore, a strip shaped semiconductor thin film 6 is arranged to part of the propagation path under the grating electrodes 2 or at a position at the outside of the propagation path at a right angle to the propagation path at the same width W as the propagation path or a different width (a) from the width of the propagation path.