| 摘要 |
PURPOSE: To provide a plasma generator which can dispense with a resist and a mask and is released from restriction and a limit by controlling a plasma generating inter-electrode distance in a micro area, and generating discharge plasma under a specific high pressure gas condition. CONSTITUTION: In a high pressure vessel, a plasma generating inter-electrode distance is controlled in a micro area of 10nm to 50μm, and discharge plasma is generated under a high pressure gas condition of an inter-electrode distance D and working pressure P as shown by an expression. Under this condition, inter-electrode gas is ionized, and stable plasma ofμm, nm scale is generated and maintained. Spatial local processing ofμm, nm scale is performed without a process of a resist and masking by this plasma. Therefore, a high voltage environmental micro-electrode-gap plasma generator which is released from complication, restriction and a limit of the whole processing and can be used for material processing plasma can be obtained.
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