发明名称 STRESS VOLTAGE APPLICATION CIRCUIT CAPABLE OF APPLYING STRESS IN UNITS OF BLOCK
摘要 <p>PROBLEM TO BE SOLVED: To obtain a stress voltage applying circuit which can apply sufficient stress voltage to quickly find out cells which are not seriously faulty. SOLUTION: Any one of the row blocks B1 to B10 is selected by a block selection control circuit 20 depending on a block selection signal by means of the address decoding. When the stress voltage application object is a row block B1, a path voltage which is boosted up on the basis of a program voltage is applied to the gates of transistors T1 to T4 by means of a block selection control circuit 20A depending on the block selection signal, and a stress voltage is applied to the gates of selected transistor groups 2A, 2D via the transistors T1, T4. Moreover, the stress voltage offered by a word line selection control circuit 30 is applied to the word line via transistors T2, T3. With application of the stress voltage in unit of block, even if there is a serious defective cell which drops stress voltage in certain block, sufficient stress voltage may be applied to the cells in the other blocks, which are not seriously faulty.</p>
申请公布号 JPH08306200(A) 申请公布日期 1996.11.22
申请号 JP19960107272 申请日期 1996.04.26
申请人 SAMSUNG ELECTRON CO LTD 发明人 KOU YONNAN;SAI EIJIYUN
分类号 G11C11/413;G11C16/06;G11C16/08;G11C16/34;G11C29/00;G11C29/06;G11C29/50 主分类号 G11C11/413
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