POLYSILICON LAYER FORMATION METHOD OF SEMICONDUCTOR ELEMENT,申请号JP19960106869-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	POLYSILICON LAYER FORMATION METHOD OF SEMICONDUCTOR ELEMENT
摘要
申请公布号	JPH08306642(A)	申请公布日期	1996.11.22
申请号	JP19960106869	申请日期	1996.04.26
申请人	GENDAI DENSHI SANGYO KK	发明人	KEN GOSEI;KIN SHINTAI
分类号	H01L21/28;H01L21/20;H01L21/265;H01L21/285;H01L21/324;(IPC1-7):H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

您可能感兴趣的专利

LOW NOISE SOLID STATE FLUORSCOPIC RADIATION IMAGER

SOLID STATE IMAGE PICK UP DEVICE

SPRAY TYPE REFRACTORY AND INSULATING COATING MATERIAL AND ITS APPLICATION METHOD

Constructional amusement apparatus

Tilt type steering apparatus

Channel member for ducting

REFUSE COMPACTING APPARATUS

Shock absorber for steering column

Mechanism for operating a cascade of variable pitch thrust vectoring vanes

Inductor chip device

Low-drag vehicle radiator arrangement

Coating surfaces

Covering of a central buffer coupling for rail vehicles

Thrust generating device

Substituted perfluoroalkylguanidines, process for their preparation, their use as medicine or diagnostic as well as medicines containing them

Apparatus for reducing the cylinder deflection in rotary printing machines