| 摘要 |
<p>PURPOSE: To provide a vapor growth equipment wherein irregularity of film thickness of epitaxial wafers formed on the respective surfaces of a barrel type susceptor, irregularity of concentration of carrier gas, and irregularity between the respective surfaces of the susceptor are reduced. CONSTITUTION: This vapor growth equipment is provided with a reactor 20, a barrel type susceptor 10 on which wafers 12 are mounted, material supplying ports which introduce material gas to the inside of the reactor 20, and an exhaust vent 32 which discharges exhaust gas of the material gas introduced in the inside of the reactor 20, to the outside of the reactor 20. A number of the material supplying ports P1 -Pn , which number corresponds to the number of surfaces of the barrel type susceptor 10 on which surfaces the wafers 12 are mounted, are arranged above the reactor 20 at specified intervals corresponding to a surface 13. A discharging ring 31 continuously connected to the exhaust vent 32 is installed in the lower part in the reactor 20, and the barrel type susceptor 10 and the discharging ring 31 are relatively rotated.</p> |
