| 摘要 |
PURPOSE: To provide a chalcopyrite semiconductor thin film solar cell safely without using a KCN solution and at low cost by a method wherein the surface treatment of a chalcopyrite semiconductor thin film is performed using gas containing a halogen element. CONSTITUTION: An Mo electrode is formed on a glass substrate 1 as a lower electrode 2 by sputtering and a CuInS2 thin film 3 containing excessively Cu is formed by a multiple deposition method and after that, the substrate 1 is installed on a substrate holder 7, BCl3 gas is introduced into a container 6 from a gas feed source 11 via a gas flow rate control device 10 and a gas jet hole 9 and when the thin film 3 is treated for 30 minutes while the holder 7 is kept at 150 to 200 deg.C by a substrate heating heater 8, the Cu being mixed in the thin film 3 is removed. |
