发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: To realize high patterning and simplification of process without sacrifice of high speed operation by making thin the insulation film, e.g. an interlayer insulation film, thereby suppressing the delay of signal by increase in the capacity of signal line. CONSTITUTION: An N<+> diffusion region 7 is provided between a signal line 1 for transmitting the output from a prestage inverter 13 to a post-stage inverter 15 and a semiconductor substrate (conductor region) 4 forming the parasitic capacity together with the signal line 1 while being isolated electrically from the signal line 1 and the semiconductor substrate 4. It is connected with an aluminum interconnection to obtain a dummy signal line 1a which is applied with a signal having same phase as the signal on the signal line 1.
申请公布号 JPH08306773(A) 申请公布日期 1996.11.22
申请号 JP19950106727 申请日期 1995.04.28
申请人 SHARP CORP 发明人 ISHII TOSHIO
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L21/82;H01L23/522;H01L29/786;(IPC1-7):H01L21/768;H01L21/320 主分类号 H01L23/52
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