| 摘要 |
PURPOSE: To form an electrode whose particle diameter density and size are controlled by a method wherein an amorphous silicon layer with surface natural oxide film removed is exposed in silane gas after heat treatment in vacuum or an inert gas. CONSTITUTION: A fixed oxide film 321, a polysilicon gate 323 and an impurity region 322 are selectively formed on a P-type silicon substrate 320. Next, the natural oxide film on the surface of an amorphous electrode layer for storage formed on a thick insulating layer 340 is removed for purification so that the amorphous silicon layer may be deposited by silane gas irradiation so as to form a storage electrode 350 of an amogrphous silicon by continuously annealing in an inert gas. Next, a dielectric film 360 is formed on respective electrodes 350 by heat treatment in nitrogen containing atmosphere. By the heat treatment at this time, the silicon electrodes 350 can be polycrystallized notably. Finally, a cell plate electrode layer 370 can be formed by phosphodoped polycrystallization or amorphous silicon. |
