| 摘要 |
PURPOSE: To reduce the steps due to a dielectric capacitor and manufacture the dielectric capacitor at a low cost. CONSTITUTION: A Pt film 35 and a PZT film 34 are etched by using the SiO2 film 36 of a bottom electrode pattern, and the SiO2 film 36 is patterned as the top electrode. The Pt film 35 is etched by using the SiO2 film 36 as a mask and a Pt film 33 and a TiN film 32 are etched by using the PZT film 34 as a mask. Namely, the SiO2 film 36 is used as a mask for both etching processes and the thickness of the SiO2 film 36 is reduced by both etching processes and the range whereupon the SiO2 film 36 is left is permitted to be small. The SiO2 film 36 can be formed in one process. |
