发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 A semiconductor chip (105') is stuck to a substrate (412) with an organic adhesive layer (409) containing conductive particles (406) and electrodes (412) are electrically connected to pads (405) through the particles (406). The chip (105') is produced by a method of rotating at a high speed or horizontally reciprocally moving a semiconductor wafer (105) stuck on a tape (107) to flow etchant on the semiconductor wafer (105) rapidly and horizontally, etching uniformly the semiconductor wafer (105) by the etchant to thin the wafer (105), and dicing the wafer (105) into chips. The thin semiconductor chip (150) is stuck to the substrate (102) by heating and pressing the chip (105') to the substrate (102) by using a heating head (106). Therefore, the semiconductor chip (105') is stably produced at a low cost and is stuck to the substrate (412) without causing cracks in the chip and, as a result, a thin semiconductor device which is hardly destroyed by external bending stresses is obtained.
申请公布号 WO9636992(A1) 申请公布日期 1996.11.21
申请号 WO1996JP01263 申请日期 1996.05.14
申请人 HITACHI, LTD.;USAMI, MITSUO;TSUBOSAKI, KUNIHIRO;NISHI, KUNIHIKO 发明人 USAMI, MITSUO;TSUBOSAKI, KUNIHIRO;NISHI, KUNIHIKO
分类号 H01L21/306;H01L21/301;H01L21/58;H01L21/60;H01L21/68;(IPC1-7):H01L21/60;H01L21/78 主分类号 H01L21/306
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