| 摘要 |
<p>A method for making direct multistage thin film field effect transistors (TFT) with four masking levels includes, during the final step, depositing and etching the interconnections between the contacts of the conductive layers (2, 3, 6, 9) while providing an etched opaque pad (11) so as to mask the triple layer (4, 5, 6) from the light incident from above. The invention is particularly useful for making liquid crystal displays with integrated control circuits used in lighting systems where the TFT has to be protected from the light, and for making interconnections between the metal grid layers and the source and drain layer.</p> |
