| 摘要 |
<p>A method of forming a capacitor includes: (a) providing a node to which electrical connection to a capacitor is to be made; (b) providing a first electrically conductive capacitor plate over the node; (c) chemical vapor depositing a capacitor dielectric layer of Ta2O5 over the first electrically conductive capacitor plate; and (d) providing a predominately amorphous diffusion barrier layer over the Ta2O5 dielectric layer. A capacitor construction is also disclosed. The preferred amorphous diffusion barrier layer is electrically conductive and constitutes a metal organic chemical vapor deposited TiCxNyOz, where 'x' is in the range of from 0.01 to 0.5, and 'y' is in the range of from 0.99 to 0.5, and 'z' is in the range of from 0 to 0.3, with the sum of 'x', 'y' and 'z' equalling about 1.0.</p> |
