发明名称 |
PROCESS FOR PRODUCING A DFB LASER DIODE WITH COUPLED WAVEGUIDE AND DFB LASER DIODE FILM STRUCTURE |
摘要 |
It is possible with the process of the invention to produce MRCW high-temperature laser diodes with coupled optical waveguides in four epitaxy steps, in which preferably the first and last two epitaxies are performed virtually immediately after one another and an interruption is needed only to produce a grid. It is possible to make other components, e.g. photodiodes, using the process of the invention. |
申请公布号 |
WO9637020(A1) |
申请公布日期 |
1996.11.21 |
申请号 |
WO1996DE00781 |
申请日期 |
1996.05.03 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;STEGMUELLER, BERNHARD;MATZ, RICHARD |
发明人 |
STEGMUELLER, BERNHARD;MATZ, RICHARD |
分类号 |
G02B6/42;G02B6/122;H01S5/00;H01S5/026;H01S5/12;H01S5/227;H01S5/343 |
主分类号 |
G02B6/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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