METHOD OF FORMING A CAPACITOR ELECTRODE OF A SEMICONDUCTOR DEVICE

摘要

depositing a polysilicon film(1) and a HSG film(2) in sequence on a wafer; forming a nitride film(3) to form a BPSG film(4) planarized on the nitride film(3); remaining the BPSG film(5) on the ravine of the curves of the nitride film(3) by etchback of the BPSG film(4); wet-etching of the top of the curves of the nitride film(3); etching the top of the curves of the HSG film(2) and the polysilicon film(1) selectively; and removing the remained BPSG film(5) and the nitride film(3).