发明名称
摘要 PURPOSE:To facilitate process design by utilizing the specific relation between the dependency on an inhibitor concn., the dependency on a reaction product and the dissolving rate of a novolak base simple substance at the time of indicating the dissolving rate with the standardidized inhibitor concn. of a resist. CONSTITUTION:Simulation is executed by making use of the fact that the relation expressed by the equation I holds between the dissolving rate R1(M) when only the inhibitor is incorporated in the novolak at the concn. M, the dissolving rate RE(P) when only the reaction product is incorporated therein at the concn. P, and the dissolving rate RB of the novolak base simple substance at the time of indicating the dissolving rate R of the resist film in a developing soln. as the function of the standardized inhibitor concn. M and reaction product concn. P in the resist. The dissolving rate characteristics of the high-resolution resist are easily described in this way and the SAMPLE simulation is enabled. The efficient execution of the process design is enabled by selecting the optimum resist.
申请公布号 JP2555874(B2) 申请公布日期 1996.11.20
申请号 JP19880130939 申请日期 1988.05.27
申请人 NIPPON ELECTRIC CO 发明人 OOFUJI TAKESHI
分类号 G03F7/00;G03C5/00;G03F7/26;G03F7/30;H01L21/027;H01L21/30;(IPC1-7):G03F7/00 主分类号 G03F7/00
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