| 摘要 |
PURPOSE:To control the change of a pattern dimension and the film wear of a resist due to a standing wave effect and a multiple reflection effect in a film, etc., by dipping the surface of the resist into an alkaline solution and drying and then exposing, thermally treating, wholly exposing and developing the obtd. surface of the resist. CONSTITUTION:The positive type photoresist 2 composed of a quinone diazide type photosensitive agent and an alkali soluble novolak resin is applied on a substrate 1 composed of a Si crystal, etc., followed by thermally treating it. Next, the surface of the resist 2 is dipped into the alkali solution 4, and dried, and then selectively exposed by an UV ray 5 on the obtd. surface. Subsequently, the resist 2 is thermally treated, and then the UV ray is exposed wholly on the obtd. surface, followed by developing it to form a resist pattern 2'. And, the solution 4 is composed of an aqueous solution of tetramethyl ammonium hydroxide or potassium hydroxide, etc. |
