| 摘要 |
A GaN system compound semiconductor double heterostructure in a light emission device comprises an active layer (1) sandwiched between first and second cladding layer (2,3). Those three layers are made of GaN system compound semiconductor materials. The first, second and third GaN system compound semiconductor materials have first, second and third hexagonal crystal structures of basal planes tilted from a (0001) plane by an angle in the range of 0 degree to a few degrees, and the basal planes are substantially parallel to interfaces of the active layer (1) to the first and second cladding layer (2,3). The GaN system compound semiconductor double heterostructure have a pair of opposite resonance faces vertical to a direction in which a light is emitted, and for each of the first, second and third hexagonal crystal structures, a pair of opposite planes in the six planes vertical to the basal plane forms the opposite resonance faces. The double hetrostructure is formed on a GaN epitaxial layer (6) by selective area growth. <IMAGE> |
