Static memory long write test

摘要

According to the present invention, after a test data pattern has been written to selected static memory cells, the wordlines of the memory cells are turned off and the bitline true and bitline complement of the memory cells are simultaneously pulled to a predetermined logic level for the duration of the long write test so that the memory cells are disturbed. After the long write test, the contents of the memory cells are read to determine which memory cells contain corrupted data and therefore have bitline to memory cell leakage problems.