Process for creating a deposit of silicon oxide on a traveling solid substrate

摘要

According to the process the substrate (2) is subjected to an electrical discharge with a dielectric barrier, for example a discharge in the presence of an atmosphere containing a silane, an oxidizing gas, NO, N2O, CO2 or O2, in particular, and a neutral carrier gas such as nitrogen or argon. A controlled atmosphere containing the silane and the oxidizing gas is maintained in the immediate vicinity of the electrode, around the electrode (6) employed for the electrical discharge, while avoiding the process being perturbed by atmospheric air entrained, for example, by the substrate (2) as it travels (3).