| 摘要 |
A semiconductor device includes implanted regions (54) formed in a semiconductor layer (12). The implanted regions (54) are self-aligned with field oxide regions (20) and a gate structure (25) and have side edges (56, 57) that are formed at an angle with respect to the (001) plane and bottom edges (58) that are aligned with the (110) plane. Since side edges (56, 57) and not aligned with the (001) plane, when an anneal is performed, recrystallization proceeds primarily from the (110) plane alone rather than from the (110) and (001) planes simultaneously. Accordingly, the edge recrystalline damage caused by the intersecting of recrystallized silicon growing along the (110) and (001) planes simultaneously is avoided.
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