发明名称 |
Voltage regulator for non-volatile semiconductor memory devices |
摘要 |
A voltage regulator for electrically programmable non-volatile semiconductor memory devices of the type comprising a gain stage (3), supplied by a programming voltage (VPP) and having an input terminal connected to a divider (6) of said programming voltage (VPP) and an output terminal (U) connected to a programming line (5) of at least one memory cell (2) comprises at least one circuit element (4) capable of adapting the line programming voltage (5) to the length (L) of the memory cell (2). This solution makes it possible to have on the bit line of the memory device a drain voltage varying according to the actual length of the memory cell.
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申请公布号 |
US5576990(A) |
申请公布日期 |
1996.11.19 |
申请号 |
US19950367538 |
申请日期 |
1995.01.03 |
申请人 |
SGS-THOMSON MICROELECTRONICS, S.R.L. |
发明人 |
CAMERLENGHI, EMILIO;CASAGRANDE, GIULIO |
分类号 |
G11C17/00;G11C5/14;G11C16/06;G11C16/30;(IPC1-7):G11C11/34 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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