发明名称 Processing method based on resist pattern formation, and resist pattern forming apparatus
摘要 A processing method based on resist pattern formation, includes the steps of forming an electrostatic latent image on a photosensitive rotating drum, forming a toner image on the drum by developing the electrostatic latent image with a hot-melt toner, transferring the toner image on the drum onto a processing target member made of a material that is dissolved by an etchant, in accordance with hot-melt transfer, and processing the processing target member based on the toner image thereon as a resist pattern. The processing step has an etching step of causing the etchant to act on a surface of the processing target member on which the resist pattern has been transferred, thereby selectively etching the surface of the processing target member.
申请公布号 US5576135(A) 申请公布日期 1996.11.19
申请号 US19950402107 申请日期 1995.03.10
申请人 OLYMPUS OPTICAL CO., LTD. 发明人 NISHIKAWA, MASAJI
分类号 G03G13/26;C23F1/00;G03F1/00;G03G15/16;H05K3/06;H05K3/18;(IPC1-7):G03G13/16 主分类号 G03G13/26
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