| 摘要 |
A first aluminum interconnection layer includes an aluminum alloy layer 12 and an upper metal layer 13 containing refractory metal. A second aluminum layer 15 is in contact with a surface of upper metal layer 13 through a through-hole 19. A thickness t2 of a contact portion 132 of upper metal layer 13 is smaller than a thickness t1 of a non-contact portion 131. In an interconnection structure for a semiconductor integrated circuit device, the increase in electric resistance by the through-hole is suppressed, and also effects achieved by layer 13 containing refractory metal forming the most upper portion of first aluminum interconnection layer 1A are maintained. |
