发明名称 MONOCRYSTAL WORK METHOD
摘要 PURPOSE: To lap the back of a wafer into a rough surface without entailing any crack and chipping in and around this lithium tantalate pr lithium niobate monocrystal wafer. CONSTITUTION: In a job for processing the surface of a lithium tantalate or niobate lithium monocrystal wafer into a rough surface, lapping work is carried out in a state that paste 1 having solidified powder consisting of the same quality of material as the wafer to be lapped is applied to a peripheral part of this wafer 2.
申请公布号 JPH08300255(A) 申请公布日期 1996.11.19
申请号 JP19950110461 申请日期 1995.05.09
申请人 SUMITOMO METAL MINING CO LTD 发明人 SUZUKI TETSUO
分类号 B24B1/00;B24B37/00;H01L21/304 主分类号 B24B1/00
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