摘要 |
The operating characteristics of emitter-switched thyristors (1) are improved by the addition of a floating ohmic contact (14) over adjacent regions of n+ and p+ type (15, 16). In a lateral device, the floating ohmic contact (14) and the adjacent regions of n+ and p+ type (15, 16) are provided between the anode region (4) and the cathode region (8, 9, 10). The device has enhanced turn-on characteristics with a high breakdown voltage and high current density capabilities.
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申请人 |
FUJI ELECTRIC CO., LTD.;AMARATUNGA, GEHAN, ANIL, JOSEPH;CHEN, WEI;KUMAGAI, NAOKI |
发明人 |
AMARATUNGA, GEHAN, ANIL, JOSEPH;CHEN, WEI;KUMAGAI, NAOKI |