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发明名称
Mikroelektronischer ballistischer Transistor und Verfahren zu seiner Herstellung
摘要
申请公布号
DE69209336(T2)
申请公布日期
1996.11.14
申请号
DE19926009336T
申请日期
1992.01.27
申请人
SONY CORP., TOKIO/TOKYO, JP
发明人
UGAJIN, RYUICHI, SHINAGAWA-KU, TOKYO, JP
分类号
H01J3/02;H01J21/10;(IPC1-7):H01J3/02;H01J1/30;H01J9/02
主分类号
H01J3/02
代理机构
代理人
主权项
地址
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