Orange to green light emitting semiconductor LED

摘要

The jacket layers (3, 5) of a double-heterostructure (3-5) sandwich a light emitting layer (4). The top jacket layer (5) carries a current propagation layer (6) of very low thickness. On the current propagation layer is located a contact layer structure (7, 9) with branched and finger-like electrodes (7). Pref., the current propagation layer is sufficiently thin as to hardly absorb any radiation. It is made by economical MOCVD process. The contact layer structure has electrodes distributing, together with the current propagation layer, the current sufficiently on the surface of the light emitting layer.