DOUBLE HETEROJUNCTION LIGHT EMITTING DIODE WITH GALLIUM NITRIDE ACTIVE LAYER

摘要

A double heterostructure (24) for a light emitting diode (20) comprises a layer of aluminum gallium nitride a first conductivity type (25); a layer of aluminum gallium nitride having the opposite conductivity type (27); and an active layer of gallium nitride (26) between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.