| 摘要 |
<p>The operating characteristics of emitter-switched thyristors (1) are improved by the addition of a floating ohmic contact (14) over adjacent regions of n+ and p+ type (15, 16). In a lateral device, the floating ohmic contact (14) and the adjacent regions of n+ and p+ type (15, 16) are provided between the anode region (4) and the cathode region (8, 9, 10). The device has enhanced turn-on characteristics with a high breakdown voltage and high current density capabilities.</p> |
