| 摘要 |
The circuit has a half-bridge with a pair of series semiconductor switches (HS1,HS2), controlled by respective secondary windings of a control transformer (STR), the lamp load circuit (LDR,FL,CZ,CHB) coupled to the output of the half bridge via the transformer primary winding. The semiconductor switches are provided by power transistors, with a variable emitter resistance (RE1,STM1,RE1.1 ; RE2,STM2,RE2.1) in each of their emitter paths, provided in part by a controlled MOSFET (STM1,STM2) in parallel with a low-ohmic source resistance (RE1.1, RE2.1).
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