发明名称 |
OHMIC CONTACT ELECTRODE FORMING METHOD OF CDZNTE |
摘要 |
The method is to form an ohmic contact electrode(30) by substitution reaction between Au ion and Cd ion in forming an Au chloride solution(20) on a single crystal Cd(1-x)Zn(x)Te(0.04 Dx D0.2) wafer(10). The resistivity( ) of the Cd(1-x)Zn(x)Te wafer(10) is 109 D D 1011 Úcm and the Au chloride solution(20) is formed by melting Chloroauric(III) Acid and HAuCl4 . 3H2O into the Deionized water.
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申请公布号 |
KR960015488(B1) |
申请公布日期 |
1996.11.14 |
申请号 |
KR19930013949 |
申请日期 |
1993.07.22 |
申请人 |
THE RESEARCH INSTITUTE OF NATIONAL DEFENCE SCIENCE |
发明人 |
CHOE, MYUNG-JIN;LEE, HONG-KYU;KANG, YOUNG-ILL |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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