发明名称 OHMIC CONTACT ELECTRODE FORMING METHOD OF CDZNTE
摘要 The method is to form an ohmic contact electrode(30) by substitution reaction between Au ion and Cd ion in forming an Au chloride solution(20) on a single crystal Cd(1-x)Zn(x)Te(0.04 Dx D0.2) wafer(10). The resistivity( ) of the Cd(1-x)Zn(x)Te wafer(10) is 109 D D 1011 Úcm and the Au chloride solution(20) is formed by melting Chloroauric(III) Acid and HAuCl4 . 3H2O into the Deionized water.
申请公布号 KR960015488(B1) 申请公布日期 1996.11.14
申请号 KR19930013949 申请日期 1993.07.22
申请人 THE RESEARCH INSTITUTE OF NATIONAL DEFENCE SCIENCE 发明人 CHOE, MYUNG-JIN;LEE, HONG-KYU;KANG, YOUNG-ILL
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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