HILLOCK HAZE ELEMINATING METHOD

摘要

The method is designed to eliminate the hillock haze generated in forming a silicide of semiconductor device by restraining W2Si3 having irregular grain size. The silicide is formed on a polysilicone line to increase the conductivity of the polysilicone line. The method comprises the steps of : forming a polysilicone film; forming a silicide film on the polysilicone film; and injecting SiH4 gas after forming the silicide film.