摘要 |
<p>A method of manufacturing a device whereby a layer structure (15, 16; 15, 28) with semiconductor elements (5) and conductor tracks (14) is formed on a first side (2) of a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) disposed on an insulating layer (3). Then the semiconductor wafer is fastened with said first side to a support wafer (18) by means of a glue layer (17), the support wafer being provided with a metallization (20). Material is then removed from the semiconductor wafer from the other, second side (19) thereof until the insulating layer is exposed. Contact windows (21) are provided in the insulating layer from the first side of the semiconductor wafer before the latter is fastened on the support wafer. These windows are filled with a material which can be removed selectively relative to the insulating layer. The contact windows are opened from the second side of the semiconductor wafer after the latter has been fastened on the support wafer and after the insulating layer has been exposed. Furthermore, openings (22) are formed in the layer structure and in the glue layer at the areas of the contact windows, which openings extend down to the metallization on the support wafer, after which the contact windows and the openings formed are provided with conductive elements. The expensive photolithographic equipment in the clean room can be used for this formation of the contact windows. Such equipment is then unnecessary in then space used for final mounting.</p> |