发明名称 CAVITY-CONTAINING STRUCTURE AND METHOD FOR MAKING SAME
摘要 <p>PCT No. PCT/FR95/00078 Sec. 371 Date Aug. 1, 1996 Sec. 102(e) Date Aug. 1, 1996 PCT Filed Jan. 25, 1995 PCT Pub. No. WO95/20824 PCT Pub. Date Aug. 3, 1995This process for producing a structure incorporating a substrate (2), a thin surface film (16) made from a non-conducting material joined to one face (1) of the substrate (2), said substrate (2) having cavities (10) flush with said face (1), comprises the following successive stages: etching cavities (10) in one face (1) of a substrate, the cavities having in the plane of the substrate face at least one dimension which is a function of the thickness of the surface film, in order to correctly secure the latter, joining a non-conducting material wafer (12) to the face (1) of the substrate (2), thinning the wafer (12) to obtain the thin surface film.</p>
申请公布号 EP0741910(A1) 申请公布日期 1996.11.13
申请号 EP19950907695 申请日期 1995.01.25
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 BRUEL, MICHEL
分类号 H01L23/34;B81C1/00;H01L21/02;H01L21/48;H01L21/58;H01L23/473;(IPC1-7):H01L21/58;H01L21/473 主分类号 H01L23/34
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