发明名称 |
Diamond film and method of producing same |
摘要 |
Diamond cannot be epitaxially grown on any materials except diamond. Polycrystalline diamond is useless for an application as a material of semiconductor devices in general. In order to make a quasi-single crystal, small diamond granules are epitaxially grown on a single crystal substrate whose lattice constant is similar to that of diamond, a deposition layer is formed on the island diamond granules. The initial substrate is eliminated. Diamond is grown on the deposition layer having diamond granules to be a film with a certain thickness. The initially-grown diamond granules which have the same crystallographical direction align in order the directions of crystals of the latter-grown diamond by playing a role of seed crystals. <IMAGE> |
申请公布号 |
EP0530021(B1) |
申请公布日期 |
1996.11.13 |
申请号 |
EP19920307819 |
申请日期 |
1992.08.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
TSUNO, TAKASHI;FUJIMORI, NAOJI |
分类号 |
C30B25/18;C30B25/02;C30B29/04 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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