发明名称 Diamond film and method of producing same
摘要 Diamond cannot be epitaxially grown on any materials except diamond. Polycrystalline diamond is useless for an application as a material of semiconductor devices in general. In order to make a quasi-single crystal, small diamond granules are epitaxially grown on a single crystal substrate whose lattice constant is similar to that of diamond, a deposition layer is formed on the island diamond granules. The initial substrate is eliminated. Diamond is grown on the deposition layer having diamond granules to be a film with a certain thickness. The initially-grown diamond granules which have the same crystallographical direction align in order the directions of crystals of the latter-grown diamond by playing a role of seed crystals. <IMAGE>
申请公布号 EP0530021(B1) 申请公布日期 1996.11.13
申请号 EP19920307819 申请日期 1992.08.27
申请人 SUMITOMO ELECTRIC INDUSTRIES, LIMITED 发明人 TSUNO, TAKASHI;FUJIMORI, NAOJI
分类号 C30B25/18;C30B25/02;C30B29/04 主分类号 C30B25/18
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