| 摘要 |
1,243,357. Superconductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 4 Nov., 1968 [24 Nov., 1967], No. 52179/68. Heading H1K. [Also in Division H3] A superconductor device comprises two superconductive metal films spaced apart on an insulating substrate the adjacent portions of the films being covered with a metal oxide layer bridged by a superconductive layer to form two Josephson junctions in series and a control conductor crossing the junctions in a direction perpendicular to the current path through the junctions. As shown, Fig. 1, two gate conductors 6, 8 are vapour deposited through a mask on a layer 2 cf insulating material such as silicon monoxide provided on the surface of a superconductive ground plane 4 supported by a glass substrate (not shown). The adjacent ends of the gate conductors 6, 8 are oxidized to form thin insulating layers 10, 12 and a superconductor layer 16 is deposited bridging the gap to form two Josephson junctions in series. A layer 18 of insulating material is deposited across the bridge and a control conductor 20 is deposited on this layer. When a current is applied to the control conductor 20 the junctions are switched from a superconducting state (tunnelling with no voltage drop) to the normal state (quasi particle tunnelling). The superconductor films may be of lead, tin, niobium or tantalum. Two such devices may be connected in parallel to form a bi-stable memory circuit.
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