SELF ALIGNMENT WIRING METHOD

摘要

defining a gate electrode(102) and an impurity region on an active region defined on a semiconductor substrate(1); forming a first insulating film(103); patterning to expose the constant width of the gate electrode(102) at a constant interval after forming a first photoresist film(104) on the first insulating film(103); forming a second insulating film(105) and remaining only the second insulating film(105) between the first photoresist(104) patterns by etch back; removing a second photoresist film(106) on the second insualting film(105) between the gate electrodes(102) after forming the second photoresist film(106); forming a contact hole(107) by removing the first and the second insulating film(103,105); remaining a wiring metal between the remained second insulating film(105) by etch back of the wiring metal after removing the first and the second photoresist(104,106); and forming a metal wire(109) by removing the second insulating film(105).